2SA1213-Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1213-O/2SA1213-YElectrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO -50IC=-100A, IE=0Collector-Base Breakdown Voltage VV(BR)CEO -50IC=-10mA, IB=0Collector-Emitter Breakdown Voltag VV(BR)EBO -5IE=-100A, IC=0Emitter-Base Breakdown Voltage VICBO VCB=-50V, IE=0Collector-Base Cutoff Current -0.1 AIEB

2SA1213-OMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth2SA1213-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

2SA1213-OMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth2SA1213-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolut

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo

2SA1 21 3TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V

2SA1213-89 Plastic-Encapsulate TransistorsSOTTRANSISTOR (PNP) SOT-89 FEATURES Small Flat Package1. BASE Power Amplifier and Switching Applications 2. COLLECTOR Low Saturation Voltage High Speed Switching Time3. EMITTER Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS (T

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector C

SMD Type TransistorsPNP Transistors 2SA12131.70 0.1FeaturesLow Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)High Speed Switching Time: tstg = 1.0us (typ.)Small Flat Package0.42 0.10.46 0.1PC = 1 to 2W (mounted on ceramic substrate)Complementary to 2SC28731.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

CHENMKO ENTERPRISE CO.,LTD2SA1213GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 AmpereAPPLICATION* Power amplifier .FEATURESC-62/SOT-89* Small flat package. (SC-62/SOT-89)* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.0 to 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.1.7MAX. 0.4

General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless other

General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless other

2SA1213SQ PNP TransistorFeatures SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the NPNTransistor 2SC2873SQ is Recommended.Equivalent Circuit 1.Base 2.Collector 3. Emitter2.CollectorMarking Code : 2SA1213SQ-O : NX 2SA1213SQ-Y : NY1.Base3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless oth

2SA1213 SOT-89 Ty p PNP Transistors3FeaturesLow Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)2High Speed Switching Time: tstg = 1.0us (typ.)1 1.BaseSmall Flat Package2.Collector3.EmitterPC = 1 to 2W (mounted on ceramic substrate) Simplified outline(SOT-89)Complementary to 2SC2873Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

2SA1213BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to 2SC2873 Power Amplifier and Switching Application Low Saturation Voltage High Speed Switching Time Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 2