2SA1400-Z Todos los transistores

 

2SA1400-Z Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1400-Z
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO252
 

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2SA1400-Z datasheet

 ..1. Size:215K  nec
2sa1400-z 2sa1400.pdf pdf_icon

2SA1400-Z

 ..2. Size:39K  kexin
2sa1400-z.pdf pdf_icon

2SA1400-Z

SMD Type Transistors Silicon Transistor 2SA1400-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High Voltage VCEO=-400V High speed tr 1.0 s 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -400 V Collec

 7.1. Size:200K  inchange semiconductor
2sa1400z.pdf pdf_icon

2SA1400-Z

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1400Z DESCRIPTION High Collector-Emitter Voltage - V = -400V(Min) CEO Complement to Type 2SC3588Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching ,especially in Hybrid integrated cricuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.1. Size:206K  toshiba
2sa1408.pdf pdf_icon

2SA1400-Z

Otros transistores... 2SA1213-O , 2SA1213O-G , 2SA1213-Y , 2SA1213Y-G , 2SA1298-O , 2SA1298-Y , 2SA1386B , 2SA1386B-A , BDT88 , 2SA1412-Z , 2SA1416S-TD-E , 2SA1416T-TD-E , 2SA1417S-TD-E , 2SA1417T-TD-E , 2SA1418S-TD-E , 2SB1616 , 2SA1419S-TD-H .

History: DWC308 | PMST2222

 

 

 


 
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