2SA1941B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RoHS 2SA1941B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -10A/-140V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO = -140V (min) 5.45 0.1 5.45 0.1 1.4 Complementary to 2SC5198B B C E TO-3P package which can be installed to the

2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle

2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle

JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltage VCEO

2SA1941(3CA1941) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications. 70W 2SC5198 3DA5198 Features Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). /Absolute maximum ratings(Ta=25 )

2SA1941 Silicon PNP transistor Power Amplifier Applications Complementary to 2SC5198 High collector voltage VCEO=-140V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the applicatio of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to d

2SA1941T6TL Silicon PNP Power Transistor DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1941 DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

2SA1941 Transistor Silicon PNP Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage Vceo=-140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SC5198 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Volta

isc Silicon PNP Power Transistor 2SA1941 DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app