Биполярный транзистор 2SA1941B
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1941B
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 100
W
Макcимально допустимое напряжение коллектор-база (Ucb): 140
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 10
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 30
MHz
Ёмкость коллекторного перехода (Cc): 320
pf
Статический коэффициент передачи тока (hfe): 35
Корпус транзистора:
TO3P
Аналоги (замена) для 2SA1941B
2SA1941B
Datasheet (PDF)
..1. Size:208K nell
2sa1941b.pdf RoHS 2SA1941B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP triple diffusion planar transistor-10A/-140V/100W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURESHigh breakdown voltage, VCEO = -140V (min) 5.450.1 5.450.11.4Complementary to 2SC5198BB C ETO-3P package which can be installed to the
7.1. Size:157K toshiba
2sa1941r 2sa1941o.pdf 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VColle
7.2. Size:157K toshiba
2sa1941.pdf 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VColle
7.3. Size:196K jmnic
2sa1941.pdf JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
7.4. Size:1367K jilin sino
2sc5198 2sa1941.pdf Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltageVCEO
7.5. Size:241K jilin sino
2sa1941.pdf PNP so`FU\cOlvso`FU\cOlvso`FU\cOlv so`FU\cOlvSilicon PNP Epitaxial Transistor R2SA1941 APPLICATIONS (u (u (u (u Power Amplifier Applications \ OR YFUT NTyr'` FEATURES NTyr'` NTyr'`
7.6. Size:272K lzg
2sa1941 3ca1941.pdf 2SA1941(3CA1941) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications. 70W 2SC51983DA5198 Features: Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). /Absolute maximum ratings(Ta=25)
7.7. Size:1244K cn evvo
2sa1941.pdf 2SA1941Silicon PNP transistorPower Amplifier Applications Complementary to 2SC5198 High collector voltage:VCEO=-140V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. the applicatioof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to d
7.8. Size:1285K cn sps
2sa1941t6tl.pdf 2SA1941T6TLSilicon PNP Power TransistorDESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle
7.9. Size:427K cn sptech
2sa1941r 2sa1941o.pdf SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1941DESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
7.10. Size:301K cn yw
2sa1941.pdf 2SA1941 Transistor Silicon PNP Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage: Vceo=-140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SC5198 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Volta
7.11. Size:221K inchange semiconductor
2sa1941.pdf isc Silicon PNP Power Transistor 2SA1941DESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app
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