2SA2153-TD-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA2153-TD-E
Código: AZ
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 420 MHz
Capacitancia de salida (Cc): 16 pF
Ganancia de corriente contínua (hfe): 200
Empaquetado / Estuche: SOT89
Búsqueda de reemplazo de transistor bipolar 2SA2153-TD-E
2SA2153-TD-E Datasheet (PDF)
1.1. 2sa2153-td-e.pdf 
Size:201K _update
Ordering number : EN8123A 2SA2153 Bipolar Transistor http://onsemi.com -50V, -2A, Low VCE(sat), PNP Single PCP Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of MBIT process • Low saturation voltage • Large current capacity and wide ASO Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions R
3.1. 2sa2153.pdf Size:254K _sanyo
Ordering number : ENN8123 2SA2153 PNP Epitaxial Planar Silicon Transistor 2SA2153 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Rati
4.1. 2sa2154mfv 071101.pdf Size:151K _toshiba
2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 1.2 ± 0.05 • High voltage and high current 0.80 ± 0.05 : VCEO = -50 V, IC = -150 mA (max) • Excellent hFE linearity 1 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 • High hFE : hFE = 120~400 • Complementary to 2SC6026MFV 3
4.2. 2sa2154ct 090413.pdf Size:151K _toshiba
2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = -50V, IC = -100mA (max) Unit: mm 0.6±0.05 • Excellent hFE linearity 0.5±0.03 : hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SC6026CT 3 Absolute Max
4.3. 2sa2154.pdf Size:145K _toshiba
2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit: mm • High voltage and high current : VCEO = -50 V, IC = -100 mA (max) • Excellent hFE linearity : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 1 • Complementary to 2SC6026 3 2 0.8±0.05 0.1±0.05 1.0±0.05 Ab
4.4. 2sa2151a.pdf Size:206K _sanken-ele
2-1 Transistors Specifications List by Part Number Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) min max (V) (V) (A) 2SA1186 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SA1215 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SA1216 Audio, general-purpose 180 180
4.5. 2sa2151.pdf Size:100K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -2
Otros transistores... 2SA2124-TD-E , 2SA2125-TD-E , 2SA2125-TD-H , 2SA2126-E , 2SA2126-H , 2SA2126-TL-E , 2SA2126-TL-H , 2SA2127-AE , 2N3904 , 2SA2166 , 2SA2167 , 2SA2169-E , 2SA2169-TL-E , 2SA2186-AN , 2SA2188 , 2SA2205-E , 2SA2205-TL-E .
