2SA2153-TD-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA2153-TD-E
Código: AZ
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 420 MHz
Capacitancia de salida (Cc): 16 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de 2SA2153-TD-E
2SA2153-TD-E Datasheet (PDF)
2sa2153.pdf

Ordering number : ENN8123 2SA2153PNP Epitaxial Planar Silicon Transistor2SA2153High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Con
2sa2153.pdf

Ordering number : EN8123A2SA2153Bipolar Transistorhttp://onsemi.com-50V, -2A, Low VCE(sat), PNP Single PCPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT process Low saturation voltage Large current capacity and wide ASOSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions R
2sa2154ct.pdf

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : VCEO = -50V, IC = -100mA (max) Unit: mm0.60.05 Excellent hFE linearity 0.50.03 : hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026CT Absolute M
2sa2154mfv.pdf

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current 0.80 0.05: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120~400 Complementary to 2SC6026MFV 3
Otros transistores... 2SA2124-TD-E , 2SA2125-TD-E , 2SA2125-TD-H , 2SA2126-E , 2SA2126-H , 2SA2126-TL-E , 2SA2126-TL-H , 2SA2127-AE , TIP41C , 2SA2166 , 2SA2167 , 2SA2169-E , 2SA2169-TL-E , 2SA2186-AN , 2SA2188 , 2SA2205-E , 2SA2205-TL-E .
History: HEPS0014
History: HEPS0014



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