2SA2153-TD-E - Даташиты. Аналоги. Основные параметры

Ordering number ENN8123 2SA2153 PNP Epitaxial Planar Silicon Transistor 2SA2153 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Con

Ordering number EN8123A 2SA2153 Bipolar Transistor http //onsemi.com -50V, -2A, Low VCE(sat), PNP Single PCP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of MBIT process Low saturation voltage Large current capacity and wide ASO Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions R

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current VCEO = -50V, IC = -100mA (max) Unit mm 0.6 0.05 Excellent hFE linearity 0.5 0.03 hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 Complementary to 2SC6026CT Absolute M

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current 0.80 0.05 VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 400 Complementary to 2SC6026MFV 3

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current V = -50V, I = -100mA (max) CEO C Unit mm Excellent h linearity FE h (I = -0.1 mA) / h (I = -2 mA)= 0.95 (typ.) FE C FE C High h h = 120 to 400 FE FE Complementary to 2SC6026CT Absolute Maximum Ratings

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 120 400 1 Complementary to 2SC6026 3 2 0.8 0.05 0.1 0.05 1.0 0.05 Ab

2-1 Transistors Specifications List by Part Number Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) min max (V) (V) (A) 2SA1186 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SA1215 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SA1216

isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC6011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA2151A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC6011A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V