Биполярный транзистор 2SA2153-TD-E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA2153-TD-E
Маркировка: AZ
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 420 MHz
Ёмкость коллекторного перехода (Cc): 16 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: SOT89
Аналоги (замена) для 2SA2153-TD-E
2SA2153-TD-E Datasheet (PDF)
2sa2153.pdf
Ordering number : ENN8123 2SA2153PNP Epitaxial Planar Silicon Transistor2SA2153High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Con
2sa2153.pdf
Ordering number : EN8123A2SA2153Bipolar Transistorhttp://onsemi.com-50V, -2A, Low VCE(sat), PNP Single PCPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT process Low saturation voltage Large current capacity and wide ASOSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions R
2sa2154ct.pdf
2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : VCEO = -50V, IC = -100mA (max) Unit: mm0.60.05 Excellent hFE linearity 0.50.03 : hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026CT Absolute M
2sa2154mfv.pdf
2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current 0.80 0.05: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120~400 Complementary to 2SC6026MFV 3
2sa2154ct-y 2sa2154ct-gr.pdf
2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : V = -50V, I = -100mA (max) CEO C Unit: mm Excellent h linearity FE : h (I = -0.1 mA) / h (I = -2 mA)= 0.95 (typ.) FE C FE C High h h = 120 to 400 FE : FE Complementary to 2SC6026CT Absolute Maximum Ratings
2sa2154.pdf
2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE : hFE = 120~400 1 Complementary to 2SC6026 32 0.80.050.10.051.00.05Ab
2sa2151a.pdf
2-1 TransistorsSpecifications List by Part NumberAbsolute Maximum RatingsICBO hFEVCBO VCEO Ic PcConditions ConditionsPart Number ApplicationsVCB VCE Ic(V) (V) (A) (W) ( A)min max(V) (V) (A)2SA1186 Audio, general-purpose 150 150 10 100 100 150 50 180 4 32SA1215 Audio, general-purpose 160 160 15 150 100 160 50 180 4 52SA1216
2sa2151.pdf
isc Silicon PNP Power Transistor 2SA2151DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC6011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sa2151a.pdf
isc Silicon PNP Power Transistor 2SA2151ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC6011AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050