2SA2223
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA2223
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 160
W
Tensión colector-base (Vcb): 230
V
Tensión colector-emisor (Vce): 230
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 35
MHz
Capacitancia de salida (Cc): 500
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO3P
Búsqueda de reemplazo de transistor bipolar 2SA2223
2SA2223
Datasheet (PDF)
..1. Size:228K sanken-ele
2sa2223.pdf
2SA2223Audio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These PNP power transistors achieve Improved sound out
..2. Size:191K inchange semiconductor
2sa2223.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2223DESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SC6145Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATIN
0.1. Size:228K sanken-ele
2sa2223a.pdf
2SA2223AAudio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These PNP power transistors achieve Improved sound ou
0.2. Size:216K inchange semiconductor
2sa2223a.pdf
isc Silicon PNP Power Transistor 2SA2223ADESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SC6145AMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL P
8.1. Size:165K toshiba
2sa2220.pdf
2SA2220 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2220 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V Small collector output capacitance : Cob = 17 pF (typ.) High transition frequency : fT = 100 MHz (typ.) Complementary to 2SC6140 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCol
8.2. Size:298K sanyo
2sa2222sg.pdf
2SA2222SGOrdering number : ENA1799SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2222SGHigh-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacitance (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed swi
8.3. Size:69K sanyo
2sa2222.pdf
Ordering number : ENA1148 2SA2222SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2222High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Max
8.4. Size:239K onsemi
2sa2222sg.pdf
Ordering number : ENA1799B2SA2222SGBipolar Transistorhttp://onsemi.com ( )50V, 10A, Low VCE sat PNP TO-220F-3FSApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacity (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed switching (tf=22ns(typ.))Specifica
8.5. Size:167K inchange semiconductor
2sa2222sg.pdf
isc Silicon PNP Power Transistor 2SA2222SGDESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCBOV Collector-
8.6. Size:211K inchange semiconductor
2sa2222.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2222DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -
8.7. Size:211K inchange semiconductor
2sa2222 .pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2222DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.