Справочник транзисторов. 2SA2223

 

Биполярный транзистор 2SA2223 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA2223
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 160 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 230 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 230 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 35 MHz
   Ёмкость коллекторного перехода (Cc): 500 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO3P

 Аналоги (замена) для 2SA2223

 

 

2SA2223 Datasheet (PDF)

 ..1. Size:228K  sanken-ele
2sa2223.pdf

2SA2223
2SA2223

2SA2223Audio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These PNP power transistors achieve Improved sound out

 ..2. Size:191K  inchange semiconductor
2sa2223.pdf

2SA2223
2SA2223

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2223DESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SC6145Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATIN

 0.1. Size:228K  sanken-ele
2sa2223a.pdf

2SA2223
2SA2223

2SA2223AAudio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These PNP power transistors achieve Improved sound ou

 0.2. Size:216K  inchange semiconductor
2sa2223a.pdf

2SA2223
2SA2223

isc Silicon PNP Power Transistor 2SA2223ADESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SC6145AMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL P

 8.1. Size:165K  toshiba
2sa2220.pdf

2SA2223
2SA2223

2SA2220 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2220 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V Small collector output capacitance : Cob = 17 pF (typ.) High transition frequency : fT = 100 MHz (typ.) Complementary to 2SC6140 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCol

 8.2. Size:298K  sanyo
2sa2222sg.pdf

2SA2223
2SA2223

2SA2222SGOrdering number : ENA1799SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2222SGHigh-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacitance (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed swi

 8.3. Size:69K  sanyo
2sa2222.pdf

2SA2223
2SA2223

Ordering number : ENA1148 2SA2222SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2222High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Max

 8.4. Size:239K  onsemi
2sa2222sg.pdf

2SA2223
2SA2223

Ordering number : ENA1799B2SA2222SGBipolar Transistorhttp://onsemi.com ( )50V, 10A, Low VCE sat PNP TO-220F-3FSApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacity (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed switching (tf=22ns(typ.))Specifica

 8.5. Size:167K  inchange semiconductor
2sa2222sg.pdf

2SA2223
2SA2223

isc Silicon PNP Power Transistor 2SA2222SGDESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCBOV Collector-

 8.6. Size:211K  inchange semiconductor
2sa2222.pdf

2SA2223
2SA2223

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2222DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

 8.7. Size:211K  inchange semiconductor
2sa2222 .pdf

2SA2223
2SA2223

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2222DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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