2SB1201S-E Todos los transistores

 

2SB1201S-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1201S-E
   Código: B1201
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 22 pF
   Ganancia de corriente contínua (hfe): 140
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de transistor bipolar 2SB1201S-E

 

2SB1201S-E Datasheet (PDF)

 ..1. Size:305K  onsemi
2sb1201s-e 2sb1201s 2sb1201t-e 2sb1201t.pdf

2SB1201S-E
2SB1201S-E

Ordering number : EN2112C2SB1201/2SD1801Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

 7.1. Size:111K  sanyo
2sb1201 2sd1801.pdf

2SB1201S-E
2SB1201S-E

Ordering number:ENN2112BPNP/NPN Epitaxial Planar Silicon Transistors2SB1201/2SD1801High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1201/2SD1801]Features6.52.35.0 Adoption of FBET, MBIT processes. 0.54 Large current capacity and wide ASO. Low colle

 7.2. Size:123K  sanyo
2sb1201.pdf

2SB1201S-E
2SB1201S-E

 7.3. Size:388K  onsemi
2sb1201 2sd1801.pdf

2SB1201S-E
2SB1201S-E

Ordering number : EN2112C2SB1201/2SD1801Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

 7.4. Size:1558K  kexin
2sb1201.pdf

2SB1201S-E
2SB1201S-E

SMD Type TransistorsPNP Transistors2SB1201TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO.0.127+0.10.80-0.1max Complementary to 2SD1801+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitt

 7.5. Size:253K  inchange semiconductor
2sb1201.pdf

2SB1201S-E
2SB1201S-E

isc Silicon PNP Power Transistor 2SB1201DESCRIPTIONLarge current capacitance and wide ASOLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulators,relay drivers,lamp drivers,electrical equipmentABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: GT761 | D10B1051 | 121-1029-01

 

 
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