2SB1201T-TL-E Todos los transistores

 

2SB1201T-TL-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1201T-TL-E

Código: B1201

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Capacitancia de salida (Cc): 22 pF

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: TO252

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2SB1201T-TL-E Datasheet (PDF)

1.1. 2sb1201t-e.pdf Size:305K _update

2SB1201T-TL-E
2SB1201T-TL-E

Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast swit

1.2. 2sb1201t-tl-e.pdf Size:305K _update

2SB1201T-TL-E
2SB1201T-TL-E

Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast swit

 3.1. 2sb1201s-tl-e.pdf Size:305K _update

2SB1201T-TL-E
2SB1201T-TL-E

Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast swit

3.2. 2sb1201s-e.pdf Size:305K _update

2SB1201T-TL-E
2SB1201T-TL-E

Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor http://onsemi.com (–) (–) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast swit

 3.3. 2sb1201.pdf Size:123K _sanyo

2SB1201T-TL-E
2SB1201T-TL-E

3.4. 2sb1201 2sd1801.pdf Size:111K _sanyo

2SB1201T-TL-E
2SB1201T-TL-E

Ordering number:ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit:mm electrical equipment. 2045B [2SB1201/2SD1801] Features 6.5 2.3 5.0 Adoption of FBET, MBIT processes. 0.5 4 Large current capacity and wide ASO. Low collector-to

 3.5. 2sb1201.pdf Size:1558K _kexin

2SB1201T-TL-E
2SB1201T-TL-E

SMD Type Transistors PNP Transistors 2SB1201 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ●Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Large current capacity and wide ASO. 0.127 +0.1 0.80-0.1 max ● Complementary to 2SD1801 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitt

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