2SB1201T-TL-E
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1201T-TL-E
Código: B1201
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 22
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
TO252
Búsqueda de reemplazo de transistor bipolar 2SB1201T-TL-E
2SB1201T-TL-E
Datasheet (PDF)
5.1. Size:305K onsemi
2sb1201s-e 2sb1201s 2sb1201t-e 2sb1201t.pdf
Ordering number : EN2112C2SB1201/2SD1801Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit
7.1. Size:111K sanyo
2sb1201 2sd1801.pdf
Ordering number:ENN2112BPNP/NPN Epitaxial Planar Silicon Transistors2SB1201/2SD1801High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1201/2SD1801]Features6.52.35.0 Adoption of FBET, MBIT processes. 0.54 Large current capacity and wide ASO. Low colle
7.3. Size:388K onsemi
2sb1201 2sd1801.pdf
Ordering number : EN2112C2SB1201/2SD1801Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit
7.4. Size:1558K kexin
2sb1201.pdf
SMD Type TransistorsPNP Transistors2SB1201TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO.0.127+0.10.80-0.1max Complementary to 2SD1801+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitt
7.5. Size:253K inchange semiconductor
2sb1201.pdf
isc Silicon PNP Power Transistor 2SB1201DESCRIPTIONLarge current capacitance and wide ASOLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulators,relay drivers,lamp drivers,electrical equipmentABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2SA1771
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