2SB1302T-TD-E Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1302T-TD-E
Código: BJ
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.3 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 320 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de 2SB1302T-TD-E
2SB1302T-TD-E datasheet
2sb1302s 2sb1302t.pdf
Ordering number EN2555C 2SB1302 Bipolar Transisitor http //onsemi.com ( ) 20V, 5A, Low VCE sat PNP Single PCP Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to
2sb1302.pdf
Ordering number EN2555B 2SB1302 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SB1302 High-Current Switching Applications Applications DC-DC converters, motor drivers, relay drivers, lamp drivers. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed.
2sb1302.pdf
Ordering number EN2555C 2SB1302 Bipolar Transisitor http //onsemi.com ( ) 20V, 5A, Low VCE sat PNP Single PCP Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to
2sb1302.pdf
SMD Type Transistors PNP Transistors 2SB1302 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity. 0.42 0.1 Fast switching speed. 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base V
Otros transistores... 2SB1216T-E , 2SB1216T-H , 2SB1216T-TL-E , 2SB1216T-TL-H , 2SB1260-P , 2SB1260-Q , 2SB1260-R , 2SB1302S-TD-E , 2SA1837 , 2SB1308-P , 2SB1308-Q , 2SB1308-R , 2SB975-220 , 2SBA42 , 2SBA92 , 2SC2001-K , 2SC2001-L .
History: RN2910FE
History: RN2910FE
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Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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