All Transistors. 2SB1302T-TD-E Datasheet

 

2SB1302T-TD-E Transistor. Datasheet pdf. Equivalent

Type Designator: 2SB1302T-TD-E

Marking Code: BJ

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1.3 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 320 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT89

2SB1302T-TD-E Transistor Equivalent Substitute - Cross-Reference Search

2SB1302T-TD-E Datasheet (PDF)

1.1. 2sb1302t-td-e.pdf Size:152K _update

2SB1302T-TD-E
2SB1302T-TD-E

Ordering number : EN2555C 2SB1302 Bipolar Transisitor http://onsemi.com – – ( ) 20V, 5A, Low VCE sat PNP Single PCP Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp drivers Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to

3.1. 2sb1302s-td-e.pdf Size:152K _update

2SB1302T-TD-E
2SB1302T-TD-E

Ordering number : EN2555C 2SB1302 Bipolar Transisitor http://onsemi.com – – ( ) 20V, 5A, Low VCE sat PNP Single PCP Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp drivers Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to

3.2. 2sb1302.pdf Size:291K _sanyo

2SB1302T-TD-E
2SB1302T-TD-E

Ordering number : EN2555B 2SB1302 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SB1302 High-Current Switching Applications Applications DC-DC converters, motor drivers, relay drivers, lamp drivers. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Ultrasmall size

3.3. 2sb1302.pdf Size:1181K _kexin

2SB1302T-TD-E
2SB1302T-TD-E

SMD Type Transistors PNP Transistors 2SB1302 1.70 0.1 ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity. 0.42 0.1 ● Fast switching speed. 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base V

Datasheet: 2SB1216T-E , 2SB1216T-H , 2SB1216T-TL-E , 2SB1216T-TL-H , 2SB1260-P , 2SB1260-Q , 2SB1260-R , 2SB1302S-TD-E , 9012 , 2SB1308-P , 2SB1308-Q , 2SB1308-R , 2SB975-220 , 2SBA42 , 2SBA92 , 2SC2001-K , 2SC2001-L .

 


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BJT: MJW3281AG | MJW21196G | MJW21195G | MJW21194G | MJW21193G | MJW21192 | MJW21191 | MJW1302AG | MJL4302AG | MJL4281AG | MJL3281AG | MJL21196G | MJL21195G | MJL21194G | MJL21193G | MJL1302AG | MJH6287G | MJH6284G | MJH16018 | MJH16012 |

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