2SC2411-Q Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2411-Q 📄📄
Código: CQ
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 32 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: SOT23
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2SC2411-Q datasheet
..1. Size:225K mcc
2sc2411-q.pdf 
MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
6.1. Size:225K mcc
2sc2411-r.pdf
MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
6.2. Size:225K mcc
2sc2411-p.pdf
MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
7.1. Size:1689K rohm
2sc2411k.pdf
2SC2411K Datasheet Medium Power Transistor (32V, 500mA) lOutline l Parameter Value SMT3 VCEO 32V IC 500mA 2SC2411K SOT-346 lFeatures l 1) High ICMAX lInner circuit l ICMAX=0.5A 2)Low VCE(sat) Optimal for low voltage operation. 3)Complements the 2SA1036K. lApplication l DRIVING CIRCUIT, LOW FREQ
7.2. Size:931K rohm
2sc2411kfra.pdf
2SC2411KFRA 2SC2411K Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.5A) 2SC2411K 2SC2411KFRA Features External dimensions (Units mm) 1) High ICMax. 2SC2411KFRA 2SC2411K ICMax. = 0.5A 2) Low VCE(sat). 2.9 0.2 Optimal for low voltage operation. 1.1+0.2 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 2SA1036KFRA 3) Complements the 2SA1036K. (1) (2) 0 0.1 (3)
7.3. Size:225K secos
2sc2411.pdf
2SC2411 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max Collector 3 A 2.800 3.040 FEATURES 1 B 1.200 1.400 Base 2 C 0.890 1.110 n Emitter Power Dissipation o D 0.370 0.500 PCM 200 mW ( Tamb= 25 C) G 1.780 2.040 A n RoHS Compliant Product H 0.013 0.100 L J J 0.085 0.
7.4. Size:608K jiangsu
2sc2411.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2411 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCE
7.5. Size:643K htsemi
2sc2411.pdf
2SC2411 SOT-23 TRANSISOR(NPN) 1. BASE 2. EMITTER FEATURES High ICMax.ICMax. = 0.5mA 3. COLLECTOR Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V Collector Current
7.6. Size:204K lge
2sc2411 sot-23.pdf
2SC2411 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 32
7.7. Size:1663K wietron
2sc2411k.pdf
2SC2411K NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Total Device Dissipation PD 200 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature -55 t
7.8. Size:295K willas
2sc2411kxlt1.pdf
FM120-M WILLAS 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN silicon
7.9. Size:173K lrc
l2sc2411kqlt1g.pdf
LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SC2411KQLT1G NPN silicon Series FEATURE S-L2SC2411KQLT1G Epitaxial planar type Series Complementary to L2SA1036K We declare that the material of product are Halogen Free and 3 compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101
7.10. Size:613K lrc
l2sc2411krlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2411KRLT1G FEATURES S-L2SC2411KRLT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT 23 DEVICE MARK
7.11. Size:538K lrc
l2sc2411krlt1g l2sc2411krlt3g.pdf
L2SC2411KRLT1G S-L2SC2411KRLT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Mark
7.12. Size:337K kexin
2sc2411.pdf
SMD Type Transistors NPN Transistors 2SC2411 (2SC2411K) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.5A 1 2 Low VCE(sat).Optimal for low voltage operation. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Complements the 2SA1036/2SA1036K 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter
7.13. Size:335K panjit
2sc2411k.pdf
2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW FEATURES 0.120(3.04) NPN epitaxial silicon,planar design 0.110(2.80) Collector-emitter voltage VCE=32V Collector current IC=500mA Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICAL DAT
7.14. Size:92K chenmko
2sc2411kgp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SC2411KGP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) CONST
Otros transistores... 2SC2335F, 2SC2383-O, 2SC2383-R, 2SC2383-Y, 2SC2389S, 2SC2411KFRA, 2SC2411KGP, 2SC2411-P, 2SC945, 2SC2411-R, 2SC2412KFRA, 2SC2412KGP, 2SC2412-Q, 2SC2412-R, 2SC2412-S, 2SC2412WGP, 2SC2458-GR
