2SC2873Y-G Todos los transistores

 ..1. Size:164K  comchip
 2sc2873y-g.pdf

General Purpose Transistor 2SC2873-G Series (NPN) RoHS Device Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage. SOT-89-3L Circuit Diagram 0.181(4.60) Collector 0.173(4.40) 1 BASE 2 0.061(1.55) 2 COLLECTOR REF. 3 EMITTER 1 Base 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 3 Emitter 0.020(0.52) 0.023(0.

 6.1. Size:174K  toshiba
 2sc2873o 2sc2873y.pdf

2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Absolute

 6.2. Size:976K  slkor
 2sc2873o 2sc2873y.pdf

2SC2873 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBO V Collector-Emitter

 6.3. Size:495K  cn shikues
 2sc2873o 2sc2873y.pdf

2SC2873 NPN-Silicon General use Transistors 1W 1.5A 25V 4C 1B 2C 3E Applications Can be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0 IC 1.5 A Colle