2SC2873Y-G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2873Y-G
Código: MY
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT893L
Búsqueda de reemplazo de transistor bipolar 2SC2873Y-G
2SC2873Y-G Datasheet (PDF)
2sc2873y-g.pdf
General Purpose Transistor2SC2873-G Series (NPN)RoHS DeviceFeatures - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.SOT-89-3LCircuit Diagram0.181(4.60)Collector0.173(4.40)1 : BASE 20.061(1.55)2 : COLLECTORREF.3 : EMITTER1Base0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 33Emitter0.020(0.52) 0.023(0.
2sc2873o 2sc2873y.pdf
2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Absolute
2sc2873o 2sc2873y.pdf
2SC2873Plastic-Encapsulate Transistors TRANSISTOR (NPN)FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBOV Collector-Emitter
2sc2873o 2sc2873y.pdf
2SC2873NPN-Silicon General use Transistors1W 1.5A25V 4C1B 2C 3EApplicationsCan be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 AColle
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BD371C-10
History: BD371C-10
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050