2SC2873Y-G Datasheet and Replacement

General Purpose Transistor2SC2873-G Series (NPN)RoHS DeviceFeatures - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.SOT-89-3LCircuit Diagram0.181(4.60)Collector0.173(4.40)1 : BASE 20.061(1.55)2 : COLLECTORREF.3 : EMITTER1Base0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 33Emitter0.020(0.52) 0.023(0.

2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Absolute

2SC2873Plastic-Encapsulate Transistors TRANSISTOR (NPN)FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBOV Collector-Emitter

2SC2873NPN-Silicon General use Transistors1W 1.5A25V 4C1B 2C 3EApplicationsCan be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 AColle