2SC3647T-TD-E Todos los transistores

 

2SC3647T-TD-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3647T-TD-E
   Código: CC
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 16 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT89
 

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2SC3647T-TD-E Datasheet (PDF)

 6.1. Size:213K  onsemi
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2SC3647T-TD-E

Ordering number : EN2006D2SA1417/2SC3647Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICsSpecifications ( ) : 2SA1417Absolute Maximum Rati

 7.1. Size:141K  sanyo
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2SC3647T-TD-E

Ordering number:EN2006APNP/NPN Epitaxial Planar Silicon Transistors2SA1417/2SC3647High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Fast switching time.[2SA1417/2SC3647] Very small size making it easy to provide high-density, small-sized hybrid ICs.E

 7.2. Size:57K  sanyo
2sa1417 2sc3647.pdf pdf_icon

2SC3647T-TD-E

Ordering number : EN2006C2SA1417 / 2SC3647SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1417 / 2SC3647ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.Specifications ( ) : 2S

 7.3. Size:158K  onsemi
2sa1417 2sc3647.pdf pdf_icon

2SC3647T-TD-E

DATA SHEETwww.onsemi.comBipolar Transistor12(-)100 V, (-)2 A, Low VCE(sat),3SOT-89-3(PNP) NPN Single PCPCASE 419AU2SA1417, 2SC3647ELECTRICAL CONNECTIONFeatures2 2 Adoption of FBET, MBIT Processes1 : Base High Breakdown Voltage and Large Current Capacity1 1 2 : Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized3 : Emitter

Otros transistores... 2SC3519B , 2SC3519B-A , 2SC3528-3PFA , 2SC3588-Z , 2SC3631-Z , 2SC3646S-TD-E , 2SC3646T-TD-E , 2SC3647S-TD-E , BC557 , 2SC3648S-TD-E , 2SC3648T-TD-E , 2SC3649S-TD-E , 2SC3649S-TD-H , 2SC3649T-TD-E , 2SC3649T-TD-H , 2SC3679B , 2SC3794A .

History: GC300 | RCA9229C | F121A | BC848CLT1 | SRA2204M | RN2406

 

 
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