2SC3647T-TD-E Todos los transistores

 

2SC3647T-TD-E Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3647T-TD-E

Código: CC

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 16 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT89

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2SC3647T-TD-E datasheet

 6.1. Size:213K  onsemi
2sa1417s 2sa1417t 2sc3647s 2sc3647t.pdf pdf_icon

2SC3647T-TD-E

Ordering number EN2006D 2SA1417/2SC3647 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) 2SA1417 Absolute Maximum Rati

 7.1. Size:141K  sanyo
2sc3647.pdf pdf_icon

2SC3647T-TD-E

Ordering number EN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Fast switching time. [2SA1417/2SC3647] Very small size making it easy to provide high- density, small-sized hybrid ICs. E

 7.2. Size:57K  sanyo
2sa1417 2sc3647.pdf pdf_icon

2SC3647T-TD-E

Ordering number EN2006C 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1417 / 2SC3647 Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. Specifications ( ) 2S

 7.3. Size:158K  onsemi
2sa1417 2sc3647.pdf pdf_icon

2SC3647T-TD-E

DATA SHEET www.onsemi.com Bipolar Transistor 1 2 (-)100 V, (-)2 A, Low VCE(sat), 3 SOT-89-3 (PNP) NPN Single PCP CASE 419AU 2SA1417, 2SC3647 ELECTRICAL CONNECTION Features 2 2 Adoption of FBET, MBIT Processes 1 Base High Breakdown Voltage and Large Current Capacity 1 1 2 Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized 3 Emitter

Otros transistores... 2SC3519B , 2SC3519B-A , 2SC3528-3PFA , 2SC3588-Z , 2SC3631-Z , 2SC3646S-TD-E , 2SC3646T-TD-E , 2SC3647S-TD-E , A1941 , 2SC3648S-TD-E , 2SC3648T-TD-E , 2SC3649S-TD-E , 2SC3649S-TD-H , 2SC3649T-TD-E , 2SC3649T-TD-H , 2SC3679B , 2SC3794A .

 

 

 

 

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