2SC3647T-TD-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3647T-TD-E
SMD Transistor Code: CC
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
2SC3647T-TD-E Transistor Equivalent Substitute - Cross-Reference Search
2SC3647T-TD-E Datasheet (PDF)
2sa1417s 2sa1417t 2sc3647s 2sc3647t.pdf
Ordering number : EN2006D2SA1417/2SC3647Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICsSpecifications ( ) : 2SA1417Absolute Maximum Rati
2sc3647.pdf
Ordering number:EN2006APNP/NPN Epitaxial Planar Silicon Transistors2SA1417/2SC3647High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Fast switching time.[2SA1417/2SC3647] Very small size making it easy to provide high-density, small-sized hybrid ICs.E
2sa1417 2sc3647.pdf
Ordering number : EN2006C2SA1417 / 2SC3647SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1417 / 2SC3647ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.Specifications ( ) : 2S
2sa1417 2sc3647.pdf
DATA SHEETwww.onsemi.comBipolar Transistor12(-)100 V, (-)2 A, Low VCE(sat),3SOT-89-3(PNP) NPN Single PCPCASE 419AU2SA1417, 2SC3647ELECTRICAL CONNECTIONFeatures2 2 Adoption of FBET, MBIT Processes1 : Base High Breakdown Voltage and Large Current Capacity1 1 2 : Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized3 : Emitter
2sc3647.pdf
UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high density, small-sized hybrid ICs 1SOT-89Lead-free: 2SC3647LHalogen-free: 2SC3647G ORDERING INFORMATION Ordering Number Pin Assignment
2sc3647.pdf
SMD Type TransistorsNPN Transistors2SC36471.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA14170.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 6 Coll
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: DMJT9435
