2SC3649T-TD-E Todos los transistores

 

2SC3649T-TD-E Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3649T-TD-E

Código: CE

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 14 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT89

 Búsqueda de reemplazo de 2SC3649T-TD-E

- Selecciónⓘ de transistores por parámetros

 

2SC3649T-TD-E datasheet

 2.1. Size:220K  onsemi
 2sa1419s 2sa1419s-td-h 2sa1419t 2sa1419t-td-h 2sc3649s 2sc3649s-td-h 2sc3649t 2sc3649t-td-h.pdf pdf_icon

2SC3649T-TD-E

Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at

 7.1. Size:143K  sanyo
 2sc3649.pdf pdf_icon

2SC3649T-TD-E

Ordering number EN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Very small size making it easy to provide high- [2SA1419/2SC3649] density hybrid ICs. E Emitter C Collector B Base (

 7.2. Size:305K  sanyo
 2sa1419 2sc3649.pdf pdf_icon

2SC3649T-TD-E

Ordering number EN2007B 2SA1419 / 2SC3649 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1419 / 2SC3649 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s. Specifications ( )

 7.3. Size:356K  onsemi
 2sa1419 2sc3649.pdf pdf_icon

2SC3649T-TD-E

Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at

MOSTRAR MÁS

Otros transistores... 2SC3646S-TD-E , 2SC3646T-TD-E , 2SC3647S-TD-E , 2SC3647T-TD-E , 2SC3648S-TD-E , 2SC3648T-TD-E , 2SC3649S-TD-E , 2SC3649S-TD-H , 2SD1047 , 2SC3649T-TD-H , 2SC3679B , 2SC3794A , 2SC3852-220FA , 2SC3866-220F , 2SC3906KFRA , 2SC3969-220 , 2SC4081-A .

 

 

 

 

↑ Back to Top
.