2SC4115C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SUNROC 2SC4115S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Power dissipation PD 0.3 W (Tamb=25 ) 2. COLLECTOR Collector current I CM 3 A 3. BASE Collector-base voltage V(BR)CBO 40 V Operating and storage junction temperature range 123 TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Sy

Low Frequency Transistor (20V, 3A) 2SC4115S Features Dimensions(Unit mm) 1) Low VCE(sat). 2SC4115S VCE(sat) = 0.2V(Typ.) IC / IB = 2A / 0.1A 4 0.2 2 0.2 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. Structure 0.45+0.15 -0.05 Epitaxial planar type NPN silicon transistor 0.45+0.15 2.5+0.4 0.5 -0.05 -0.1 5 Absolute maximum ratings (Ta

MCC 2SC4115S-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4115S-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4115S-S Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating NPN Moisture Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Plastic-Encapsulate RoHS Compliant. See orderin

2SC4115 3A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1 2 3 B C A E CLASSIFICATION OF hFE(1) E C Product-Rank 2SC4115-Q 2SC4115-R 2SC411

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1 Excellent current gain characteristics. 2 2. COLLECTOR Complements to 2SA1585 3 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC4115S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Low VCE(sat). 3. BASE Excellent Current Gain Characteristics. 1 2 3 Complements The 2SA1585S. Equivalent Circuit C4115S=Device code C4115 Solid dot = Green molding compound device, - if none, the norma

2SC4115 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1. BASE 1 Excellent current gain characteristics. 2 Complements to 2SA1585 2. COLLECTOR 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 20 V Collector-Emitter Voltage VEBO 6 V

2SC4115 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Excellent current gain characteristics. 1.5 3.0 Complements to 2SA1585 Dimensions in inches and (millimeter

SMD Type Transistors NPN Transistors 2SC4115 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=20V Complements to 2SA1585 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency amplifier. 2SA1585S(3CG1585S) Features Low V ,excellent current gain characteristics complementary pair with CE(sat) 2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25 )

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency amplifier. 2SA1585S(3CG1585S) Features Low V ,excellent current gain characteristics complementary pair with CE(sat) 2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25 )