2SC4618FRA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AEC-Q101 Qualified High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659FHA 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max.

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter Absolute maximum ratings (Ta=25 C) (3) Collector

2SC4618H / 2SC4618 / 2SC4098 / 2SC2413 / 2SC2058S Transistors High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC4618H / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S Features 1) Low collector capacitance. (Cob Typ. 1.3pF) External dimensions (Units mm) 2) Low rbb, high gain, and excellent noise characteristics. 2SC4618H 1.6 0.85 (1) (2) (3) Absolute maximum ratings (Ta=2

2SC4618 Datasheet Datasheet High-Frequency Amplifer Transistor (25V, 50mA, 300MHz) lOutline l SOT-416 Parameter Value SC-75A VCEO 25V IC 50mA EMT3 lFeatures lInner circuit l l 1)Low collector capacitance. (Cob Typ.1.3pF) lApplication l HIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTER RF AMPLIFIER, LOCAL OSCILLATOR lPackaging specifi

2SC4618 0.05A , 40V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES High Voltage and Current. High DC Current Gain. A Complementary to 2SC4738. M 3 3 Top View C B Application 1 1 2 General Purpose Amplification. L 2 K E D CLASSIFICATION OF hFE H

2SC4618 NPN TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES Power dissipation PCM SOT-523(SC-75) Collector current ICM 0.05 A Collector-base voltage V(BR)CBO 40 V Operating and storage junction temperature range TJ, Tstg C ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) TYP MAX UNIT Parameter Symbol MIN Collector-base breakdown voltage IC =50 A,

SMD Type Transistors NPN Transistors 2SC4618 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 High Voltage and Current High DC Current Gain 3 Small Package 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 4