2SC5027A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5027A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 850 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de transistor bipolar 2SC5027A
2SC5027A Datasheet (PDF)
2sc5027a.pdf
RoHS 2SC5027 Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor3A/ 800V / 50WFEATURESHigh-speed switchingHigh breakdown voltage and high reliabilityCWide SOA (Safe Operation Area)TO-220 package which can be installed to the heat sink with one screwBBC APPLICATIONSCEESwitching regulator and general purposeTO-2
2sc5027af.pdf
RoHS 2SC5027 Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor3A/ 800V / 50WFEATURESHigh-speed switchingHigh breakdown voltage and high reliabilityCWide SOA (Safe Operation Area)TO-220 package which can be installed to the heat sink with one screwBBC APPLICATIONSCEESwitching regulator and general purposeTO-2
2sc5027e.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube2SC5027EL-
2sc5027.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220* High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1TO-220F*Pb-free plating product number: 2SC5027L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 32SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-
2sc5027t1tl.pdf
2SC5027T1TLELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BV Emitter -Base Breakdown Voltage I = 1mA; I = 0 7 V EBO E CBV Collector- Emitter Breakdown Voltage I = 5mA; I = 0 800 V CEO C BBV Collector- Base Breakdown Voltage I = 1mA; I = 0 850 V CBO C ECollector-Emitter Saturation Voltage I = 1.5A; I = 0.3A 2.0 V
2sc5027.pdf
isc Silicon NPN Power Transistor 2SC5027DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Volt
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: MMBT4401-G | 2SC5030O | MMBT5141 | ACY34
History: MMBT4401-G | 2SC5030O | MMBT5141 | ACY34
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050