2SC5027A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5027A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220AB
2SC5027A Transistor Equivalent Substitute - Cross-Reference Search
2SC5027A Datasheet (PDF)
2sc5027a.pdf
RoHS 2SC5027 Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor3A/ 800V / 50WFEATURESHigh-speed switchingHigh breakdown voltage and high reliabilityCWide SOA (Safe Operation Area)TO-220 package which can be installed to the heat sink with one screwBBC APPLICATIONSCEESwitching regulator and general purposeTO-2
2sc5027af.pdf
RoHS 2SC5027 Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor3A/ 800V / 50WFEATURESHigh-speed switchingHigh breakdown voltage and high reliabilityCWide SOA (Safe Operation Area)TO-220 package which can be installed to the heat sink with one screwBBC APPLICATIONSCEESwitching regulator and general purposeTO-2
2sc5027e.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube2SC5027EL-
2sc5027.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220* High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1TO-220F*Pb-free plating product number: 2SC5027L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 32SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-
2sc5027t1tl.pdf
2SC5027T1TLELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BV Emitter -Base Breakdown Voltage I = 1mA; I = 0 7 V EBO E CBV Collector- Emitter Breakdown Voltage I = 5mA; I = 0 800 V CEO C BBV Collector- Base Breakdown Voltage I = 1mA; I = 0 850 V CBO C ECollector-Emitter Saturation Voltage I = 1.5A; I = 0.3A 2.0 V
2sc5027.pdf
isc Silicon NPN Power Transistor 2SC5027DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Volt
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2004
