2SC5227A-4-TB-E Todos los transistores

 

2SC5227A-4-TB-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC5227A-4-TB-E
   Código: LN
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.07 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5000 MHz
   Capacitancia de salida (Cc): 0.75 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: SOT23

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2SC5227A-4-TB-E Datasheet (PDF)

 0.1. Size:229K  onsemi
2sc5227a-4-tb-e 2sc5227a-5-tb-e.pdf

2SC5227A-4-TB-E
2SC5227A-4-TB-E

Ordering number : ENA1063A2SC5227ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single CPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-t

 6.1. Size:75K  sanyo
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2SC5227A-4-TB-E
2SC5227A-4-TB-E

Ordering number : ENA1063 2SC5227ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5227AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditio

 7.1. Size:127K  sanyo
2sc5227.pdf

2SC5227A-4-TB-E
2SC5227A-4-TB-E

Ordering number:EN5034NPN Epitaxial Planar Silicon Transistor2SC5227VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2018B High cutoff frequency : fT=7GHz typ.[2SC5227]0.40.1630 to 0.11 0.95 20.951.92.91 : Base2 : Emitter3 :

 7.2. Size:974K  kexin
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2SC5227A-4-TB-E
2SC5227A-4-TB-E

SMD Type TransistorsNPN Transistors2SC5227SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

 7.3. Size:175K  inchange semiconductor
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2SC5227A-4-TB-E
2SC5227A-4-TB-E

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5227DESCRIPTIONHigh Gain Bandwidth Productf = 7 GHz TYP.THigh Gain, Low Noise FigureS 2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF wideband low noise amplifierapp

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History: FT417A | BUXD87-1 | BFU910F | PDTC144WM

 

 
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