2SC5415AE-TD-E Todos los transistores

 

2SC5415AE-TD-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC5415AE-TD-E
   Código: EA
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5000 MHz
   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: SOT89
 

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2SC5415AE-TD-E Datasheet (PDF)

 5.1. Size:184K  onsemi
 2sc5415ae 2sc5415af.pdf pdf_icon

2SC5415AE-TD-E

Ordering number : ENA1080A2SC5415ARF Transistorhttp://onsemi.com12V, 100mA, fT=6.7GHz, NPN Single PCPFeatures High gain 2 : S21e =9dB typ (f=1GHz) High cut-off frequency : fT=6.7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 12 VEmitter-

 6.1. Size:92K  sanyo
 2sc5415a.pdf pdf_icon

2SC5415AE-TD-E

Ordering number : ENA1080 2SC5415ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Low-Noise2SC5415AAmplifier ApplicationsFeatures High gain : S21e2=9dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VC

 7.1. Size:47K  sanyo
 2sc5415.pdf pdf_icon

2SC5415AE-TD-E

Ordering number:ENN5911NPN Epitaxial Planar Silicon Transistor2SC5415High-FrequencyLow-Noise Amplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =9dB typ (f=1GHz).unit:mm High cutoff frequency : fT=6.7GHz typ.2038A[2SC5415]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.752 : Collector3 : EmitterSANYO : PCPSpecifications(B

 7.2. Size:1027K  kexin
 2sc5415.pdf pdf_icon

2SC5415AE-TD-E

SMD Type TransistorsNPN Transistors2SC5415SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MQ3694 | 2N3602 | 2SC1590 | BD466A | 2SC4672-Q

 

 
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