2SC6046 Todos los transistores

2SC6046 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Unit mm OUTLINE DRAWING 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low VCE sat . 2.8 0.65 1.5 0.65 FEATURE High collector current IC MAX =600mA Low collector to emitter saturation voltage VCE sa

2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.2 s (max) (IC = 0.3A) High breakdown voltage VCES = 800 V, VCEO = 375 V Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Colle

2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.2 s (max) (IC = 0.3 A) High breakdown voltage VCES = 800 V, VCEO = 410 V Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit C

Ordering number ENN8326 2SC6043 NPN Epitaxial Planar Silicon Transistors 2SC6043 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ra

Ordering number ENN8251 2SC6044 NPN Epitaxial Planar Silicon Transistors 2SC6044 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching. Specifications Absolute Maximum Ratin