2SC6099-TL-E Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC6099-TL-E
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6.5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hFE): 300
Encapsulados: TO251
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2SC6099-TL-E datasheet
2sc6099-e 2sc6099.pdf
Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss
2sc6099.pdf
Ordering number ENA0435 2SC6099 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6099 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch
2sc6099.pdf
Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss
Otros transistores... 2SC6095-TD-E , 2SC6096-TD-E , 2SC6096-TD-H , 2SC6097-E , 2SC6097-TL-E , 2SC6098-E , 2SC6098-TL-E , 2SC6099-E , BC556 , 2SC6105 , 2SC6114G5GP , 2SC6114T1GP , 2SC6120 , 2SC6123 , 2SC6123-Z , 2SC6145 , 2SC6145A .
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