2SC6099-TL-E pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SC6099-TL-E Specs and Replacement

Type Designator: 2SC6099-TL-E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6.5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO251

2SC6099-TL-E Substitution

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2SC6099-TL-E datasheet

6.1. Size:295K onsemi

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Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss... See More ⇒

7.1. Size:40K sanyo

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Ordering number ENA0435 2SC6099 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6099 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch... See More ⇒

7.2. Size:401K onsemi

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