2SC6123-Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO

2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit mm DC-DC Converter Applications LCD Backlighting Applications High DC current gain hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation VCE(sat) = 0.18 V (max) High-speed switching tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit mm Power Amplifier Applications High DC current gain hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector

2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit mm High Voltage Amplifier Applications High voltage VCEO = 800 V Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 5

2SC6120 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Unit mm OUTLINE DRAWING 2SC6120 is a silicon NPN epitaxial type transistor designed with 2.1 high collector current, low VCE sat . 0.425 1.25 0.425 FEATURE High collector current IC MAX =600mA Low collector to emitter saturation voltage VCE