MJE13001C0 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE13001C0
Código: H01C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.65 W
Tensión colector-base (Vcb): 600 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 0.25 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MJE13001C0
MJE13001C0 Datasheet (PDF)
mje13001c0.pdf
MJE13001C0(3DD13001C0) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applications./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO 400 VVEBO 9.0 VIC 0.25 APC(Ta=25) 0.65 WTj 150 Tstg -55150 /Electrical chara
mje13001c1.pdf
MJE13001C1 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications ,,High frequency electronic li
mje13001c1.pdf
MJE13001C1(3DD13001C1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applications./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO 400 VVEBO 9.0 VIC 0.25 APC(Ta=25) 1.0 WTj 150 Tstg -55150 /Electrical charac
mje13001ct.pdf
MJE13001CT(3DD13001CT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25) 1.0 W CT 150 j T -55150 stg
mje13001c2.pdf
MJE13001C2(3DD13001C2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25) 1.0 W CT 150 j T -55150 stg
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N2476
History: 2N2476
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050