MJE13003DI1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003DI1  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 600 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO92

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MJE13003DI1 datasheet

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 mje13003di1.pdf pdf_icon

MJE13003DI1

MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

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 mje13003di1g.pdf pdf_icon

MJE13003DI1

MJE13003DI1G Rev.B May.-2020 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. HF Product. / Applications

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 mje13003di5.pdf pdf_icon

MJE13003DI1

MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V

 4.2. Size:302K  foshan
 mje13003di3.pdf pdf_icon

MJE13003DI1

MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V

MOSTRAR MÁS

Otros transistores... MJE13002H5, MJE13002H6, MJE13002I5, MJE13002I6, MJE13002I7, MJE13002VH1, MJE13003DG1, MJE13003DG5, BC327, MJE13003DI3, MJE13003DI5, MJE13003DK1, MJE13003DK3, MJE13003DK5, MJE13003DK7, MJE13003DN5, MJE13003E1