MJE13003DI1 Datasheet. Specs and Replacement
Type Designator: MJE13003DI1 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO92
MJE13003DI1 Substitution
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MJE13003DI1 datasheet
MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V... See More ⇒
MJE13003DI1G Rev.B May.-2020 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. HF Product. / Applications ... See More ⇒
MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V... See More ⇒
MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V... See More ⇒
Detailed specifications: MJE13002H5, MJE13002H6, MJE13002I5, MJE13002I6, MJE13002I7, MJE13002VH1, MJE13003DG1, MJE13003DG5, BC327, MJE13003DI3, MJE13003DI5, MJE13003DK1, MJE13003DK3, MJE13003DK5, MJE13003DK7, MJE13003DN5, MJE13003E1
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