MJE13003K5 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE13003K5
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 600 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar MJE13003K5
MJE13003K5 Datasheet (PDF)
mje13003k5.pdf
MJE13003K5(3DD13003K5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003k.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100C * Inductive switching ma
mje13003k4.pdf
MJE13003K4 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features ,High voltage capability, high speed switching. / Applications High frequency electronic lighting, sw
mje13003k4.pdf
MJE13003K4(3DD13003K4) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003k3.pdf
MJE13003K3(3DD13003K3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003k7.pdf
MJE13003K7(3DD13003K7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003k6.pdf
MJE13003K6(3DD13003K6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003k8.pdf
MJE13003K8(3DD13003K8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
