MJE13003M7 Todos los transistores

 

MJE13003M7 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE13003M7
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 1.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar MJE13003M7

 

MJE13003M7 Datasheet (PDF)

 ..1. Size:197K  foshan
mje13003m7.pdf

MJE13003M7
MJE13003M7

MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.1. Size:191K  foshan
mje13003m8.pdf

MJE13003M7
MJE13003M7

MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.2. Size:187K  foshan
mje13003m5.pdf

MJE13003M7
MJE13003M7

MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 700 VVCEO

 5.3. Size:189K  foshan
mje13003m6.pdf

MJE13003M7
MJE13003M7

MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.4. Size:194K  foshan
mje13003m3.pdf

MJE13003M7
MJE13003M7

MJE13003M3(3DD13003M3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.5. Size:182K  foshan
mje13003m1.pdf

MJE13003M7
MJE13003M7

MJE13003M1(3DD13003M1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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