All Transistors. MJE13003M7 Datasheet

 

MJE13003M7 Datasheet and Replacement


   Type Designator: MJE13003M7
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220
 

 MJE13003M7 Substitution

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MJE13003M7 Datasheet (PDF)

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MJE13003M7

MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.1. Size:191K  foshan
 mje13003m8.pdf pdf_icon

MJE13003M7

MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 5.2. Size:187K  foshan
 mje13003m5.pdf pdf_icon

MJE13003M7

MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 700 VVCEO

 5.3. Size:189K  foshan
 mje13003m6.pdf pdf_icon

MJE13003M7

MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

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Datasheet: MJE13003L5 , MJE13003L6 , MJE13003LF1 , MJE13003LF5 , MJE13003M1 , MJE13003M3 , MJE13003M5 , MJE13003M6 , D667 , MJE13003M8 , MJE13003N5 , MJE13003N8 , MJE13003VF1 , MJE13003VG1 , MJE13003VG5 , MJE13003VH1 , MJE13003VH5 .

Keywords - MJE13003M7 transistor datasheet

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