MJE13003VG5 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE13003VG5
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 5 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO126
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MJE13003VG5 datasheet
mje13003vg5.pdf
MJE13003VG5(3DD13003VG5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 400 V VCE
mje13003vg1.pdf
MJE13003VG1(3DD13003VG1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 400 V VCE
mje13003vk1.pdf
MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore
mje13003vk7.pdf
MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V
Otros transistores... MJE13003M5, MJE13003M6, MJE13003M7, MJE13003M8, MJE13003N5, MJE13003N8, MJE13003VF1, MJE13003VG1, S9018, MJE13003VH1, MJE13003VH5, MJE13003VI1, MJE13003VI5, MJE13003VK1, MJE13003VK3, MJE13003VK5, MJE13003VK7
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