MJE13003VG5 Specs and Replacement
Type Designator: MJE13003VG5
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO126
MJE13003VG5 Substitution
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MJE13003VG5 datasheet
MJE13003VG5(3DD13003VG5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 400 V VCE... See More ⇒
MJE13003VG1(3DD13003VG1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 400 V VCE... See More ⇒
MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore... See More ⇒
MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V ... See More ⇒
Detailed specifications: MJE13003M5, MJE13003M6, MJE13003M7, MJE13003M8, MJE13003N5, MJE13003N8, MJE13003VF1, MJE13003VG1, S9018, MJE13003VH1, MJE13003VH5, MJE13003VI1, MJE13003VI5, MJE13003VK1, MJE13003VK3, MJE13003VK5, MJE13003VK7
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History: MJE13003F1
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