MJE13005DP5 Todos los transistores

 

MJE13005DP5 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE13005DP5
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 2.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO126
 

 Búsqueda de reemplazo de MJE13005DP5

   - Selección ⓘ de transistores por parámetros

 

MJE13005DP5 datasheet

 ..1. Size:292K  foshan
mje13005dp5.pdf pdf_icon

MJE13005DP5

MJE13005DP5(3DD13005DP5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C

 5.1. Size:118K  utc
mje13005d.pdf pdf_icon

MJE13005DP5

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC

 5.2. Size:115K  utc
mje13005d-k.pdf pdf_icon

MJE13005DP5

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in

 5.3. Size:51K  kec
mje13005d.pdf pdf_icon

MJE13005DP5

SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHAR

Otros transistores... MJE13003VK5 , MJE13003VK7 , MJE13003VN5 , MJE13003VN7 , MJE13004P1 , MJE13004P3 , MJE13005A , MJE13005DC , BD139 , MJE13005DQ3 , MJE13005DQ4 , MJE13005DQ5 , MJE13005DQ7 , MJE13005DRB , MJE13005DT3 , MJE13005DT7 , MJE13005G .

History: 2SD675 | A1586 | TD13005DSMD | BR3DD13005LP7R | 3DD13005_G7D | 3DD13005ED-V

 

 

 


 
↑ Back to Top
.