MJE13007G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7

Order this documentMOTOROLAby MJE13007/DSEMICONDUCTOR TECHNICAL DATAMJE13007MJF13007Designer's Data SheetSWITCHMODENPN Bipolar Power TransistorPOWER TRANSISTORFor Switching Power Supply Applications8.0 AMPERES400 VOLTSThe MJE/MJF13007 is designed for highvoltage, highspeed power switching80/40 WATTSinductive circuits where fall time is critical. It is part

MJE13007A SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3The MJE13007A is silicon multiepitaxial mesa 21NPN power transistor mounted in Jedec TO-220plastic package.TO-220They are inteded for use in motor control,switching regulators etc.INTER

MJE13007 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITYAPPLICATIONS SWITCHING REGULATORS MOTOR CONTROLDESCRIPTION32The MJE13007 is a silicon multiepitaxial mesa1NPN power transistor mounted in Jedec TO-220plastic package.TO-220It is are inteded for use in motor control, switchingregulators etc.INTE

MJE13007Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE13007 is designed for high-voltage, high-speed powerwww.onsemi.comswitching inductive circuits where fall time is critical. It is particularlysuited for 115 and 220 V switch-mode applications such as SwitchingPOWER TRANSISTORRegulators, Inverters, Motor Controls, Solenoid/Relay drivers

MJE13007GSWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE13007G is designed for high-voltage, high-speed powerhttp://onsemi.comswitching inductive circuits where fall time is critical. It is particularlysuited for 115 and 220 V SWITCHMODE applications such asSwitching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTORdri

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage,high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 70

UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage andhigh-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V

SEMICONDUCTOR MJE13007TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.6 S(Max.), at IC=5AS(Max.), tf=0.7High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Vol

SEMICONDUCTOR MJE13007FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.6 S(Max.), at IC=5AS(Max.), tf=0.7High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Vo

Spec. No. : HE200501 HI-SINCERITY Issued Date : 2005.06.01 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (

Spec. No. : HE200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007ANPN MJE /MJE SERIES TRANSISTORS MJE13007ANPN MJE

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007NPN MJE /MJE SERIES TRANSISTORS MJE13007NPN MJE

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13007MNPN MJE /MJE SERIES TRANSISTORS MJE13007MNPN MJE

MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

MJE13007V8(BR3DD13007V8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

SEMICONDUCTORMJE13007FTECHNICAL DATAC MJE13007F ATRANSISTOR (NPN) SWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS_A 10 16 0 20+HIGH SPEED DC-DC CONVERTER APPLICATION._B 15 00 0 20+_C 3 00 0 20+FLUORESCENT LIGHT BALLASTOR APPLICATION.D 0 6250 125E 3 50 typF 2 7 typ_G 16 80 0 4+LMFEATURES _H 0 45 0 1

MJE13007V7(3DD13007V7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 8.0 A C I 16 A

MJE13007DV7 NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0

isc Silicon NPN Power Transistor MJE13007ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 2.0(Max) @ I = 5.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA