MJE13007G datasheet, аналоги, основные параметры
Наименование производителя: MJE13007G 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Ёмкость коллекторного перехода (Cc): 80 pf
Статический коэффициент передачи тока (hFE): 5
Корпус транзистора: TO220
TO220F
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Аналоги (замена) для MJE13007G
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MJE13007G даташит
..1. Size:408K utc
mje13007g.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7
6.1. Size:337K motorola
mje13007.pdf 
Order this document MOTOROLA by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor POWER TRANSISTOR For Switching Power Supply Applications 8.0 AMPERES 400 VOLTS The MJE/MJF13007 is designed for high voltage, high speed power switching 80/40 WATTS inductive circuits where fall time is critical. It is part
6.2. Size:63K st
mje13007a.pdf 
MJE13007A SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 The MJE13007A is silicon multiepitaxial mesa 2 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 They are inteded for use in motor control, switching regulators etc. INTER
6.3. Size:29K st
mje13007.pdf 
MJE13007 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 2 The MJE13007 is a silicon multiepitaxial mesa 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 It is are inteded for use in motor control, switching regulators etc. INTE
6.4. Size:275K onsemi
mje13007.pdf 
MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high-voltage, high-speed power www.onsemi.com switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch-mode applications such as Switching POWER TRANSISTOR Regulators, Inverters, Motor Controls, Solenoid/Relay drivers
6.5. Size:194K onsemi
mje13007-d.pdf 
MJE13007G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high-voltage, high-speed power http //onsemi.com switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTOR dri
6.6. Size:380K utc
mje13007.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 7
6.7. Size:368K utc
mje13007d.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 70
6.8. Size:351K utc
mje13007-m.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V
6.9. Size:339K kec
mje13007.pdf 
SEMICONDUCTOR MJE13007 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times ton=1.6 S(Max.), at IC=5A S(Max.), tf=0.7 High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Vol
6.10. Size:351K kec
mje13007f.pdf 
SEMICONDUCTOR MJE13007F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times ton=1.6 S(Max.), at IC=5A S(Max.), tf=0.7 High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Vo
6.11. Size:50K hsmc
hmje13007a.pdf 
Spec. No. HE200501 HI-SINCERITY Issued Date 2005.06.01 Revised Date 2007.03.06 MICROELECTRONICS CORP. Page No. 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (
6.12. Size:50K hsmc
hmje13007.pdf 
Spec. No. HE200207 HI-SINCERITY Issued Date 1993.04.12 Revised Date 2007.03.06 MICROELECTRONICS CORP. Page No. 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T
6.13. Size:256K sisemi
mje13007a.pdf 
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007A NPN MJE /MJE SERIES TRANSISTORS MJE13007A NPN MJE
6.15. Size:221K sisemi
mje13007m.pdf 
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007M NPN MJE /MJE SERIES TRANSISTORS MJE13007M NPN MJE
6.16. Size:441K blue-rocket-elect
mje13007x8.pdf 
MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light
6.17. Size:447K blue-rocket-elect
mje13007x9.pdf 
MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.
6.19. Size:455K blue-rocket-elect
mje13007x7.pdf 
MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin
6.20. Size:456K blue-rocket-elect
mje13007v9.pdf 
MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit
6.21. Size:506K blue-rocket-elect
mje13007hv7.pdf 
MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light
6.22. Size:286K first silicon
mje13007f.pdf 
SEMICONDUCTOR MJE13007F TECHNICAL DATA C MJE13007F A TRANSISTOR (NPN) SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS _ A 10 16 0 20 + HIGH SPEED DC-DC CONVERTER APPLICATION. _ B 15 00 0 20 + _ C 3 00 0 20 + FLUORESCENT LIGHT BALLASTOR APPLICATION. D 0 625 0 125 E 3 50 typ F 2 7 typ _ G 16 80 0 4 + L M FEATURES _ H 0 45 0 1
6.23. Size:238K foshan
mje13007v7.pdf 
MJE13007V7(3DD13007V7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 8.0 A C I 16 A
6.24. Size:240K foshan
mje13007dv7.pdf 
MJE13007DV7 NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0
6.25. Size:254K inchange semiconductor
mje13007a.pdf 
isc Silicon NPN Power Transistor MJE13007A DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 2.0(Max) @ I = 5.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
Другие транзисторы: MJE13005LP7, MJE13005P7, MJE13005P8, MJE13005Q7, MJE13005T7, MJE13005T8, MJE13005VT7, MJE13007DV7, BD140, MJE13007HV7, MJE13007V7, MJE13007V8, MJE13007V9, MJE13007X7, MJE13007X8, MJE13007X9, MJE13009-3PN
