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MJE15028G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE15028G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de transistor bipolar MJE15028G

 

MJE15028G Datasheet (PDF)

 ..1. Size:178K  onsemi
 mje15028g.pdf

MJE15028G MJE15028G

MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll

 6.1. Size:217K  motorola
 mje15028-31 mje15028.pdf

MJE15028G MJE15028G

Order this documentMOTOROLAby MJE15028/DSEMICONDUCTOR TECHNICAL DATANPN*MJE15028Complementary Silicon PlasticMJE15030*Power TransistorsPNP*MJE15029. . . designed for use as highfrequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 AmpereshFE = 40 (Min) @ IC = 3.0 Adc *MJE15031hFE = 20 (Min) @ IC = 4.0 Adc*Motorola Preferred Device

 6.2. Size:223K  onsemi
 mje15028 mje15030 mje15029 mje15031.pdf

MJE15028G MJE15028G

MJE15028, MJE15030 (NPN),MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*120-

 6.3. Size:163K  cdil
 mje15028 29 30 31.pdf

MJE15028G MJE15028G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package MJE15028, MJE15030MJE15029, MJE15031MJE15028, 15030 NPN PLASTIC POWER TRANSISTORSMJE15029, 15031 PNP PLASTIC POWER TRANSISTORSHigh frequency Drivers in Audio AmplifiersPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EB

 6.4. Size:174K  cn sptech
 mje15028.pdf

MJE15028G MJE15028G

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJE15028DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15029APPLICATIONSDesigned for use as highfreque

 6.5. Size:211K  inchange semiconductor
 mje15028.pdf

MJE15028G MJE15028G

isc Silicon NPN Power Transistor MJE15028DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat

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