MJE15028G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE15028G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220AB
MJE15028G Transistor Equivalent Substitute - Cross-Reference Search
MJE15028G Datasheet (PDF)
mje15028g.pdf
MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll
mje15028-31 mje15028.pdf
Order this documentMOTOROLAby MJE15028/DSEMICONDUCTOR TECHNICAL DATANPN*MJE15028Complementary Silicon PlasticMJE15030*Power TransistorsPNP*MJE15029. . . designed for use as highfrequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 AmpereshFE = 40 (Min) @ IC = 3.0 Adc *MJE15031hFE = 20 (Min) @ IC = 4.0 Adc*Motorola Preferred Device
mje15028 mje15030 mje15029 mje15031.pdf
MJE15028, MJE15030 (NPN),MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*120-
mje15028 29 30 31.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package MJE15028, MJE15030MJE15029, MJE15031MJE15028, 15030 NPN PLASTIC POWER TRANSISTORSMJE15029, 15031 PNP PLASTIC POWER TRANSISTORSHigh frequency Drivers in Audio AmplifiersPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EB
mje15028.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJE15028DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15029APPLICATIONSDesigned for use as highfreque
mje15028.pdf
isc Silicon NPN Power Transistor MJE15028DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
