MJE15030G Todos los transistores

 

MJE15030G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE15030G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO220AB

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MJE15030G datasheet

 ..1. Size:178K  onsemi
mje15030g.pdf pdf_icon

MJE15030G

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll

 6.1. Size:223K  onsemi
mje15028 mje15030 mje15029 mje15031.pdf pdf_icon

MJE15030G

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant* 120-

 6.2. Size:173K  cn sptech
mje15030.pdf pdf_icon

MJE15030G

SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15030 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15031 APPLICATIONS Designed for use as high freque

 6.3. Size:211K  inchange semiconductor
mje15030.pdf pdf_icon

MJE15030G

isc Silicon NPN Power Transistor MJE15030 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15031 Minimum Lot-to-Lot variations for robust device performance and reliable operat

Otros transistores... MJE13009X9 , MJE13009Z7 , MJE13009Z8 , MJE13009Z9 , MJE13011 , MJE1320-ISC , MJE15028G , MJE15029G , 2SC1815 , MJE15031G , MJE15032G , MJE15033G , MJE15034G , MJE15035G , MJE16014 , MJE170G , MJE171G .

 

 

 

 

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