Биполярный транзистор MJE15030G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE15030G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 30 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO220AB
Аналоги (замена) для MJE15030G
MJE15030G Datasheet (PDF)
mje15030g.pdf
MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll
mje15028 mje15030 mje15029 mje15031.pdf
MJE15028, MJE15030 (NPN),MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*120-
mje15030.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJE15030DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15031APPLICATIONSDesigned for use as highfreque
mje15030.pdf
isc Silicon NPN Power Transistor MJE15030DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050