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MJE15031G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE15031G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 150 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220AB

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MJE15031G Datasheet (PDF)

 ..1. Size:178K  onsemi
mje15031g.pdf

MJE15031G
MJE15031G

MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll

 6.1. Size:223K  onsemi
mje15028 mje15030 mje15029 mje15031.pdf

MJE15031G
MJE15031G

MJE15028, MJE15030 (NPN),MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*120-

 6.2. Size:172K  cn sptech
mje15031.pdf

MJE15031G
MJE15031G

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15030APPLICATIONSDesigned for use as highfreque

 6.3. Size:213K  inchange semiconductor
mje15031.pdf

MJE15031G
MJE15031G

isc Silicon PNP Power Transistor MJE15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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