All Transistors. MJE15031G Datasheet

 

MJE15031G Datasheet and Replacement


   Type Designator: MJE15031G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220AB
      - BJT Cross-Reference Search

   

MJE15031G Datasheet (PDF)

 ..1. Size:178K  onsemi
 mje15031g.pdf pdf_icon

MJE15031G

MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll

 6.1. Size:223K  onsemi
 mje15028 mje15030 mje15029 mje15031.pdf pdf_icon

MJE15031G

MJE15028, MJE15030 (NPN),MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*120-

 6.2. Size:172K  cn sptech
 mje15031.pdf pdf_icon

MJE15031G

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15030APPLICATIONSDesigned for use as highfreque

 6.3. Size:213K  inchange semiconductor
 mje15031.pdf pdf_icon

MJE15031G

isc Silicon PNP Power Transistor MJE15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat

SHOW MORE

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

Keywords - MJE15031G transistor datasheet

 MJE15031G cross reference
 MJE15031G equivalent finder
 MJE15031G lookup
 MJE15031G substitution
 MJE15031G replacement

 

 
Back to Top

 


 
.