MJE170G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE170G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12.5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar MJE170G
MJE170G Datasheet (PDF)
mje170g mje171g mje172g mje180g mje181g mje182g.pdf
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -
mje170g.pdf
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60
mje170 mje171 mje172.pdf
MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE170 - 60 V MJE171 - 80 V MJE172 - 100 V VCEO Collector-Emitter Voltage MJE170 - 40 V MJE171 - 60
mje170 mje171 mje172 mje180 mje181 mje182.pdf
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - M
Otros transistores... MJE15029G , MJE15030G , MJE15031G , MJE15032G , MJE15033G , MJE15034G , MJE15035G , MJE16014 , BD135 , MJE171G , MJE172G , MJE18004G , MJE18008G , MJE180G , MJE181G , MJE182G , MJE200G .
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