MJE170G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE170G 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12.5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hFE): 12
Encapsulados: TO126
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MJE170G datasheet
mje170g mje171g mje172g mje180g mje181g mje182g.pdf
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -
mje170g.pdf
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60
mje170 mje171 mje172.pdf
MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE170 - 60 V MJE171 - 80 V MJE172 - 100 V VCEO Collector-Emitter Voltage MJE170 - 40 V MJE171 - 60
mje170 mje171 mje172 mje180 mje181 mje182.pdf
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - M
Otros transistores... MJE15029G, MJE15030G, MJE15031G, MJE15032G, MJE15033G, MJE15034G, MJE15035G, MJE16014, BD135, MJE171G, MJE172G, MJE18004G, MJE18008G, MJE180G, MJE181G, MJE182G, MJE200G
History: KTA1705 | BTD2114N3 | BF542 | KDY24 | MJE15032G
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