MJE170G Datasheet and Replacement

MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60

MJE170/171/172Low Power Audio Amplifier Low Current, High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage : MJE170 - 60 V: MJE171 - 80 V: MJE172 - 100 VVCEO Collector-Emitter Voltage : MJE170 - 40 V: MJE171 - 60

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MJE170 / MJE171 / MJE172 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product TO-126 A suffix of -C specifies halogen and lead free FEATURES Low frequency amplifier EmitterCollector Low current Base High speed switching applications ABEF CNH LMK DJGMillimeter MillimeterREF. REF.Min. Max. M

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172MJE180, MJE181, MJE182MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORSMJE180, 181, 182 NPN PLASTIC POWER TRANSISTORSLow Power Audio Amplifier and Low Current, High Speed Switching ApplicationsPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BA

Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJE170/171/172 DESCRIPTION With TO-126 package Complement to type MJE180/181/182 APPLICATIONS For low power audio amplifier and low current high speed switching applications PINNING (see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Rat

isc Silicon PNP Power Transistor MJE170DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -40VDC Current Gain: h = 30(Min) @ I = -0.5 AFE C= 12(Min) @ I = -1.5 ACComplement to the NPN MJE180Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifier applications.Low current hig