All Transistors. MJE170G Datasheet

 

MJE170G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE170G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO126

 MJE170G Transistor Equivalent Substitute - Cross-Reference Search

   

MJE170G Datasheet (PDF)

 ..1. Size:119K  onsemi
mje170g mje171g mje172g mje180g mje181g mje182g.pdf

MJE170G
MJE170G

MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -

 ..2. Size:124K  onsemi
mje170g.pdf

MJE170G
MJE170G

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60

 8.1. Size:49K  fairchild semi
mje170 mje171 mje172.pdf

MJE170G
MJE170G

MJE170/171/172Low Power Audio Amplifier Low Current, High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage : MJE170 - 60 V: MJE171 - 80 V: MJE172 - 100 VVCEO Collector-Emitter Voltage : MJE170 - 40 V: MJE171 - 60

 8.2. Size:82K  onsemi
mje170 mje171 mje172 mje180 mje181 mje182.pdf

MJE170G
MJE170G

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M

 8.3. Size:168K  onsemi
mje170 mje171 mje172.pdf

MJE170G
MJE170G

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:104K  secos
mje170-mje172.pdf

MJE170G
MJE170G

MJE170 / MJE171 / MJE172 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product TO-126 A suffix of -C specifies halogen and lead free FEATURES Low frequency amplifier EmitterCollector Low current Base High speed switching applications ABEF CNH LMK DJGMillimeter MillimeterREF. REF.Min. Max. M

 8.5. Size:551K  cdil
mje170-2 mje180-2.pdf

MJE170G
MJE170G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172MJE180, MJE181, MJE182MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORSMJE180, 181, 182 NPN PLASTIC POWER TRANSISTORSLow Power Audio Amplifier and Low Current, High Speed Switching ApplicationsPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BA

 8.6. Size:117K  inchange semiconductor
mje170 171 172.pdf

MJE170G
MJE170G

Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJE170/171/172 DESCRIPTION With TO-126 package Complement to type MJE180/181/182 APPLICATIONS For low power audio amplifier and low current high speed switching applications PINNING (see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Rat

 8.7. Size:213K  inchange semiconductor
mje170.pdf

MJE170G
MJE170G

isc Silicon PNP Power Transistor MJE170DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -40VDC Current Gain: h = 30(Min) @ I = -0.5 AFE C= 12(Min) @ I = -1.5 ACComplement to the NPN MJE180Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifier applications.Low current hig

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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