MJE170G Datasheet and Replacement
Type Designator: MJE170G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO126
MJE170G Transistor Equivalent Substitute - Cross-Reference Search
MJE170G Datasheet (PDF)
mje170g mje171g mje172g mje180g mje181g mje182g.pdf
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 - ... See More ⇒
mje170g.pdf
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60... See More ⇒
mje170 mje171 mje172.pdf
MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE170 - 60 V MJE171 - 80 V MJE172 - 100 V VCEO Collector-Emitter Voltage MJE170 - 40 V MJE171 - 60... See More ⇒
mje170 mje171 mje172 mje180 mje181 mje182.pdf
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - M... See More ⇒
Datasheet: MJE15029G , MJE15030G , MJE15031G , MJE15032G , MJE15033G , MJE15034G , MJE15035G , MJE16014 , BD135 , MJE171G , MJE172G , MJE18004G , MJE18008G , MJE180G , MJE181G , MJE182G , MJE200G .
History: 2SD203 | 2SC4172 | 2SB919S | MPQ5400 | 2N6692 | DTS3705A | 2SC4183
Keywords - MJE170G transistor datasheet
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History: 2SD203 | 2SC4172 | 2SB919S | MPQ5400 | 2N6692 | DTS3705A | 2SC4183
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