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MJE171G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE171G
   Código: JE171
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 12.5 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 12
   Paquete / Cubierta: TO126

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MJE171G Datasheet (PDF)

 ..1. Size:119K  onsemi
mje170g mje171g mje172g mje180g mje181g mje182g.pdf pdf_icon

MJE171G

MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -

 ..2. Size:124K  onsemi
mje171g.pdf pdf_icon

MJE171G

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60

 8.1. Size:172K  motorola
mje171re.pdf pdf_icon

MJE171G

Order this document MOTOROLA by MJE171/D SEMICONDUCTOR TECHNICAL DATA PNP Complementary Plastic * MJE171 Silicon Power Transistors * MJE172 . . . designed for low power audio amplifier and low current, high speed switching applications. NPN Collector Emitter Sustaining Voltage * MJE181 VCEO(sus) = 60 Vdc MJE171, MJE181 VCEO(sus) = 80 Vdc MJE172, MJE182 * MJE

 8.2. Size:49K  fairchild semi
mje170 mje171 mje172.pdf pdf_icon

MJE171G

MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE170 - 60 V MJE171 - 80 V MJE172 - 100 V VCEO Collector-Emitter Voltage MJE170 - 40 V MJE171 - 60

Otros transistores... MJE15030G , MJE15031G , MJE15032G , MJE15033G , MJE15034G , MJE15035G , MJE16014 , MJE170G , 8050 , MJE172G , MJE18004G , MJE18008G , MJE180G , MJE181G , MJE182G , MJE200G , MJE210G .

History: ZXTP19060CFF | BFS61K | MJE243G | BFT13A

 

 
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