MJE171G datasheet, аналоги, основные параметры
Наименование производителя: MJE171G 📄📄
Маркировка: JE171
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 12.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 60 pf
Статический коэффициент передачи тока (hFE): 12
Корпус транзистора: TO126
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Аналоги (замена) для MJE171G
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MJE171G даташит
mje170g mje171g mje172g mje180g mje181g mje182g.pdf
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -
mje171g.pdf
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60
mje171re.pdf
Order this document MOTOROLA by MJE171/D SEMICONDUCTOR TECHNICAL DATA PNP Complementary Plastic * MJE171 Silicon Power Transistors * MJE172 . . . designed for low power audio amplifier and low current, high speed switching applications. NPN Collector Emitter Sustaining Voltage * MJE181 VCEO(sus) = 60 Vdc MJE171, MJE181 VCEO(sus) = 80 Vdc MJE172, MJE182 * MJE
mje170 mje171 mje172.pdf
MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE170 - 60 V MJE171 - 80 V MJE172 - 100 V VCEO Collector-Emitter Voltage MJE170 - 40 V MJE171 - 60
Другие транзисторы: MJE15030G, MJE15031G, MJE15032G, MJE15033G, MJE15034G, MJE15035G, MJE16014, MJE170G, 8050, MJE172G, MJE18004G, MJE18008G, MJE180G, MJE181G, MJE182G, MJE200G, MJE210G
History: D11C211B20 | D11C203B20
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