Биполярный транзистор MJE171G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE171G
Маркировка: JE171
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 12.5
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 3
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 50
MHz
Ёмкость коллекторного перехода (Cc): 60
pf
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора:
TO126
Аналоги (замена) для MJE171G
MJE171G
Datasheet (PDF)
..1. Size:119K onsemi
mje170g mje171g mje172g mje180g mje181g mje182g.pdf MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -
..2. Size:124K onsemi
mje171g.pdf MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60
8.1. Size:172K motorola
mje171re.pdf Order this documentMOTOROLAby MJE171/DSEMICONDUCTOR TECHNICAL DATAPNPComplementary Plastic*MJE171Silicon Power Transistors*MJE172. . . designed for low power audio amplifier and low current, high speed switchingapplications. NPN CollectorEmitter Sustaining Voltage *MJE181VCEO(sus) = 60 Vdc MJE171, MJE181VCEO(sus) = 80 Vdc MJE172, MJE182*MJE
8.2. Size:49K fairchild semi
mje170 mje171 mje172.pdf MJE170/171/172Low Power Audio Amplifier Low Current, High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage : MJE170 - 60 V: MJE171 - 80 V: MJE172 - 100 VVCEO Collector-Emitter Voltage : MJE170 - 40 V: MJE171 - 60
8.3. Size:82K onsemi
mje170 mje171 mje172 mje180 mje181 mje182.pdf MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M
8.4. Size:168K onsemi
mje170 mje171 mje172.pdf Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.5. Size:213K inchange semiconductor
mje171.pdf isc Silicon PNP Power Transistor MJE171DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -60VDC Current Gain: h = 30(Min) @ I = -0.5 AFE C= 12(Min) @ I = -1.5 ACComplement to the NPN MJE181Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifier applications.Low current hig
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