MJE171G datasheet, аналоги, основные параметры

Наименование производителя: MJE171G  📄📄 

Маркировка: JE171

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 12.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 50 MHz

Ёмкость коллекторного перехода (Cc): 60 pf

Статический коэффициент передачи тока (hFE): 12

Корпус транзистора: TO126

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MJE171G даташит

 ..1. Size:119K  onsemi
mje170g mje171g mje172g mje180g mje181g mje182g.pdfpdf_icon

MJE171G

MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -

 ..2. Size:124K  onsemi
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MJE171G

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60

 8.1. Size:172K  motorola
mje171re.pdfpdf_icon

MJE171G

Order this document MOTOROLA by MJE171/D SEMICONDUCTOR TECHNICAL DATA PNP Complementary Plastic * MJE171 Silicon Power Transistors * MJE172 . . . designed for low power audio amplifier and low current, high speed switching applications. NPN Collector Emitter Sustaining Voltage * MJE181 VCEO(sus) = 60 Vdc MJE171, MJE181 VCEO(sus) = 80 Vdc MJE172, MJE182 * MJE

 8.2. Size:49K  fairchild semi
mje170 mje171 mje172.pdfpdf_icon

MJE171G

MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE170 - 60 V MJE171 - 80 V MJE172 - 100 V VCEO Collector-Emitter Voltage MJE170 - 40 V MJE171 - 60

Другие транзисторы: MJE15030G, MJE15031G, MJE15032G, MJE15033G, MJE15034G, MJE15035G, MJE16014, MJE170G, 8050, MJE172G, MJE18004G, MJE18008G, MJE180G, MJE181G, MJE182G, MJE200G, MJE210G