MJE172G Datasheet. Equivalente

 ..1. Size:124K  onsemi
 mje172g.pdf

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60

 ..2. Size:119K  onsemi
 mje170g mje171g mje172g mje180g mje181g mje182g.pdf

MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -

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 brmje172d.pdf

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 mje172-mje182.pdf

MJE172 MJE182 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. 1 2 3 SOT-3

 8.3. Size:51K  st
 mje172 mje182.pdf

MJE172 MJE182 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon Epitaxial Planar, complementary transistors in Jedec SOT-32 plastic package. They are designed for low power audio amplifier 1 2 and low current, high speed switching 3 applicatio

 8.4. Size:49K  fairchild semi
 mje170 mje171 mje172.pdf

MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE170 - 60 V MJE171 - 80 V MJE172 - 100 V VCEO Collector-Emitter Voltage MJE170 - 40 V MJE171 - 60

 8.5. Size:82K  onsemi
 mje170 mje171 mje172 mje180 mje181 mje182.pdf

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - M

 8.6. Size:168K  onsemi
 mje170 mje171 mje172.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.7. Size:104K  secos
 mje170-mje172.pdf

MJE170 / MJE171 / MJE172 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product TO-126 A suffix of -C specifies halogen and lead free FEATURES Low frequency amplifier Emitter Collector Low current Base High speed switching applications A B E F C N H L M K D J G Millimeter Millimeter REF. REF. Min. Max. M

 8.8. Size:159K  inchange semiconductor
 mje172.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJE172 DESCRIPTION Collector Emitter Sustaining Voltage VCEO(SUS) = -80 V DC Current Gain hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A Complement to Type MJE182 APPLICATIONS Low power audio amplifier Low current high speed switching applications ABSOLUTE MAXIMUM R