MJE172G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60

MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -

BRMJE172D Rev.D Dec.-2015 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features .high speed switching. / Applications Low power audio amplifier, Low current, high speed switching applications.

MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon epitaxial planar, complementarytransistors in Jedec SOT-32 plastic package, theyare designed for low power audio amplifier andlow current, high speed switching applications.123SOT-3

MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon Epitaxial Planar, complementarytransistors in Jedec SOT-32 plastic package.They are designed for low power audio amplifier12and low current, high speed switching3applicatio

MJE170/171/172Low Power Audio Amplifier Low Current, High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage : MJE170 - 60 V: MJE171 - 80 V: MJE172 - 100 VVCEO Collector-Emitter Voltage : MJE170 - 40 V: MJE171 - 60

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MJE170 / MJE171 / MJE172 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product TO-126 A suffix of -C specifies halogen and lead free FEATURES Low frequency amplifier EmitterCollector Low current Base High speed switching applications ABEF CNH LMK DJGMillimeter MillimeterREF. REF.Min. Max. M

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJE172 DESCRIPTION CollectorEmitter Sustaining Voltage : VCEO(SUS) = -80 V DC Current Gain : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A Complement to Type MJE182 APPLICATIONS Low power audio amplifier Low current high speed switching applications ABSOLUTE MAXIMUM R